Photoelectric conversion device, device and array device

ABSTRACT

A photoelectric conversion device including a transparent substrate, a first electrode, at least a photoelectric conversion layer and a second electrode is provided. The first electrode is located on the transparent substrate. The transparent substrate means that at least some parts of the substrate area are transparent. At least a photoelectric conversion layer is located on the first electrode, wherein the optical light transmittance of the photoelectric conversion layer in at least a portion of the visible spectrum is higher than 20%. The second electrode is located on the photoelectric conversion layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/537,084 filed Jun. 29, 2012, which is included in its entirety hereinby reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to a photoelectric conversiondevice, a device and an array device, and more specifically to aphotoelectric conversion device, a device and an array device thatenables a portion of the visible spectrum to pass through the device.

2. Description of the Prior Art

In general, conventional photoelectric conversion devices arenon-transparent. They are widely used in various constructive materialssuch as roof structures, wall sticks, power generating boards in carroofs, etc. In some particular applications such as glasses curtains,transparent roofs, etc., transparent photoelectric conversion devicesrequire better aesthetics.

FIG. 1 schematically depicts a diagram of a conventional transparentphotoelectric conversion device assembly 10. The conventionaltransparent photoelectric conversion device assembly 10 includes atransparent substrate 12, a transparent conductive layer 14, aphotoelectric conversion layer 16 and a non-transparent electrode layer18. The conventional transparent photoelectric conversion deviceassembly 10 is made by removing parts of the non-transparent electrodelayer 18 and parts of the photoelectric conversion layer 16 so thatparts of the transparent substrate 12 and parts of the transparentconductive layer 14 are exposed to obtain the effect of lightpenetration. Due to the photoelectric conversion layer 16 beingnon-transparent, parts of the photoelectric conversion layer 16 must beremoved to obtain light penetration. However, that would reducelight-absorbing properties and lower the electrical energy generated bythe conventional transparent photoelectric conversion device assembly10, leading to bad photoelectric conversion efficiency of theconventional transparent photoelectric conversion device assembly 10.Besides, due to non-transparent palisade-shaped or comb-shaped sheltersresulting in bad perspective performances, the conventional transparentphotoelectric conversion device assembly 10 should not be a “real”transparent component.

Therefore, it is significant to develop an exact transparentphotoelectric conversion device assembly having better photoelectricconversion efficiency.

SUMMARY OF THE INVENTION

The present invention provides a photoelectric conversion device, adevice and an array device applying said photoelectric conversion deviceto solve aforementioned problems.

The present invention provides a photoelectric conversion deviceincluding a transparent substrate, a first electrode, at least aphotoelectric conversion layer and a second electrode. At least someareas of the transparent substrate are transparent. The first electrodeis located on the transparent substrate. At least a photoelectricconversion layer is located on the first electrode, wherein the opticallight transmittance of each photoelectric conversion layer in at least aportion of the visible spectrum is larger than 20%. The second electrodeis located on the photoelectric conversion layer. As there are more thanone photoelectric conversion layers, each of the photoelectricconversion layers can have its own corresponding electrodes having theirown electrical fields, thus there may be more than one first electrodeand second electrode.

The present invention provides a device including a base and at least aphotoelectric conversion device. The base has at least a transparentbase substrate. At least a photoelectric conversion device is located onat least a base transparent substrate, wherein the optical lighttransmittance of each photoelectric conversion layer of thephotoelectric conversion device in at least a portion of the visiblespectrum is larger than 20%.

The present invention provides an array device including a basesubstrate, a plurality of bases and a plurality of photoelectricconversion devices. The plurality of bases is located on the basesubstrate. The photoelectric conversion devices include at least aphotoelectric conversion layer and the optical light transmittance ofeach photoelectric conversion layer in at least a portion of the visiblespectrum is larger than 20%.

According to the above, the present invention provides a photoelectricconversion device, a device and an array device applying saidphotoelectric conversion device, wherein at least a part of the visiblespectrum can be transmitted through the photoelectric conversion device.More precisely, the photoelectric conversion device has at least aphotoelectric conversion layer allowing at least a part of the visiblespectrum to be transmitted through the photoelectric conversion layer.Specifically, the optical light transmittance of the photoelectricconversion layer in at least a part of the visible spectrum is largerthan 20%. Thus, the photoelectric conversion device of the presentinvention can have a higher optical light transmittance than the priorart and the processing costs of patterning non-transparent photoelectricconversion layers can be eliminated.

As described in the prior art, the conventional transparentphotoelectric conversion device is formed by removing parts ofnon-transparent photoelectric conversion layers, but that would reducethe photoelectric conversion efficiency dramatically and increase theprocessing costs. Because of non-transparent palisade-shaped orcomb-shaped shelters, the transparency performances are bad. In otherwords, the components of the prior art are not transparent enough. Thephotoelectric conversion device of the present invention havingtransparent photoelectric conversion layers is actually transparent,which can solve the problems of the prior art.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically depicts a diagram of a conventional transparentphotoelectric conversion device assembly.

FIG. 2 schematically depicts a cross-sectional view of a photoelectricconversion device according to one embodiment of the present invention.

FIG. 3 schematically depicts a cross-sectional view of a photoelectricconversion device according to one embodiment of the present invention.

FIG. 4 schematically depicts a cross-sectional view of a device applyinga photoelectric conversion device according to one embodiment of thepresent invention.

FIG. 5 schematically depicts a cross-sectional view of a device applyinga photoelectric conversion device according to one embodiment of thepresent invention.

FIG. 6 schematically depicts a cross-sectional view of a device applyinga photoelectric conversion device according to one embodiment of thepresent invention.

FIG. 7 schematically depicts a layout diagram applying the device ofFIG. 6.

FIG. 8 schematically depicts a top view of the device of FIG. 6.

FIG. 9 schematically depicts a cross-sectional view of a device applyinga photoelectric conversion device according to one embodiment of thepresent invention.

FIG. 10 schematically depicts a cross-sectional view of an array deviceapplying a photoelectric conversion device according to one embodimentof the present invention.

FIG. 11 schematically depicts a combination diagram of the stackedphotoelectric conversion device of FIG. 3.

FIG. 12 schematically depicts a cross-sectional view of a light-emittingdiode device applying the device of FIG. 6.

FIG. 13 schematically depicts a cross-sectional view of a liquid crystaldisplay device applying the device of FIG. 6.

DETAILED DESCRIPTION

FIG. 2 schematically depicts a cross-sectional view of a photoelectricconversion device according to one embodiment of the present invention.The photoelectric conversion device 100 includes a transparent substrate110 with at least some areas being transparent and/or at least someareas being light reflecting structures to reflect light, a firstelectrode 120, at least a photoelectric conversion layer 130 and asecond electrode 140. The first electrode 120 is located on thetransparent substrate 110. At least a photoelectric conversion layer 130is located on the first electrode 120. The second electrode 140 islocated on the photoelectric conversion layer 130. The photoelectricconversion layer 130 is used to transform optical energy into electricalenergy. The first electrode 120 and the second electrode 140 are used asa positive electrode and a negative electrode of the photoelectricconversion device 110 respectively, in order to output electrical energyor electrical charge.

The transparent substrate 110 may be a glass substrate or a flexiblesubstrate, but not limited thereto. The transparent substrate 110 mayhave a planar shape or a curved shape, and the transparent substrate 110may be made of soda-lime glass, plastic substrate or the like, but it isnot limited thereto. The first electrode 120 is a transparent electrode,which may be made of transparent conductive oxide (TCO), such asaluminum zinc oxide (AZO), grapheme or indium tin oxide (ITO). Thesecond electrode 140 may be a transparent electrode as well, which maybe made of transparent conductive oxide (TCO) such as aluminum zincoxide (AZO), grapheme or indium tin oxide (ITO). In another embodiment,the second electrode 140 may be a non-transparent electrode, which mayhave a rod-shape, a fin-shape or a finger-shape layout to expose a partof the photoelectric conversion layer 130, so that light can passthrough. The second electrode 140 may be a metal electrode made ofaluminum (Al0), molybdenum (Mo) or the like, but it is not limitedthereto. In another way, the photoelectric conversion device 100 mayfurther include a buffer layer (not shown) disposed between thephotoelectric conversion layer 130 and the first electrode 120 or thephotoelectric conversion layer 130 and the second electrode 140. Thebuffer layer (not shown) may be made of zinc sulfide, intrinsic zincoxide (intrinsic ZnO) or the like.

The photoelectric conversion layer 130 may include a P-N junction layer.The P-N junction layer absorbs the sunlight and transforms it toelectron-hole pairs; the electron-hole pairs are transferredrespectively to the first electrode 120 and the second electrode 140,and from the first electrode 120 to the second electrode 140 throughwires. It is worth noting that the photoelectric conversion layer 130 ofthe present invention enables a part of the visible spectrum to betransmitted through. For example, the optical light transmittance ofeach photoelectric conversion layer 130 in a portion of the visiblespectrum is larger than 20%. The portion of the visible spectrum may bemerely red light wave band, blue light wave band, green light wave band,yellow light wave band, purple light wave band, parts of the visiblespectrum, or the whole visible spectrum, depending upon the needs. Inother words, at least apart of the visible spectrum can penetrate intothe photoelectric conversion layer 130, so that the photoelectricconversion layer 130 can absorb at least parts of the wave band ofultraviolet light, infrared light, or visible light such as parts of thewave band of purple light, red light, green light, blue light, purplishred light, and so on. Coupled with the first electrode 120 and thesecond electrode 140, which are made with transparent conductivematerials used as transparent electrodes, at least some of the visiblelight can penetrate the photoelectric conversion device 100 effectively.The first electrode 120 and the second electrode 140 may also bedesigned to be made of a material that can let the visible light, theultraviolet and the infrared light pass through.

The photoelectric conversion layer 130 may include photoelectricconversion materials enabling visible light to penetrate, such assilicon layer, multi-compounds layer, nano and organic layer, or thelike. The silicon layer is the most widely used kind in photoelectricconversion devices. The material of the silicon layer may be crystallinesilicon or amorphous silicon, wherein the crystalline silicon mayinclude single crystalline silicon or poly-crystalline silicon, and theelectricity generation conversion efficiency of market modules may beover 12%˜20% or 10%˜18%.

Amorphous silicon may include silicon, silicon carbide, silicongermanium, silane, silicon dioxide, and the electricity generationconversion efficiency of market modules may be more than 6%˜9%. Themulti-compounds layer is often applied in space or inlight-concentrating type photoelectric conversion devices. The materialof the multi-compounds layer may include single crystal orpolycrystalline, wherein single crystal may include gallium arsenic(GaAs) or indium phosphide (InP), and the electricity generationconversion efficiency of market modules may be more than 18%˜30%; andpolycrystalline may include cadmium sulfide (CdS), cadmium telluride(CdTe), copper indium selenide (CuInSe2), and the electricity generationconversion efficiency of market modules may be more than 10%˜12%. Thenano and organic layer is often applied in organic photoelectricconversion devices. The material of the nano and organic layer may betitanium dioxide, and the c electricity generation conversion efficiencyof market modules may be lower than 1%.

In this embodiment, the photoelectric conversion layer 130 is a singlelayer photoelectric conversion material layer. In another embodiment,the photoelectric conversion layer 130 may include a plurality ofphotoelectric conversion material layers stacked with each other. Asshown in FIG. 3, a photoelectric conversion device 200 having aplurality of photoelectric conversion material layers stacked with eachother may include a transparent substrate 210, a first electrode 220located on the transparent substrate 210, a plurality of photoelectricconversion material layers stacked with each other 230, 240 located onthe first electrode 220, and a second electrode 250 located on thephotoelectric conversion material layer 240, wherein at least some ofthe visible spectrum can penetrate the photoelectric conversion materiallayer 230, 240. In a preferred embodiment, some of the visible spectrumcan penetrate the photoelectric conversion material layer 230 and thephotoelectric conversion material layers 240 are partially overlapping.Thus, the optical light transmittance of the photoelectric conversiondevice 200 in some wavebands can be improved. There are two layersincluding the photoelectric conversion material layers 230, 240 in thisembodiment. However, there may be multilayers such as three or fourlayers in another embodiment, but is not limited thereto.

FIG. 11 schematically depicts a combination diagram of the stackedphotoelectric conversion device of FIG. 3. The photoelectric conversiondevice 200 may be composed of a first photoelectric conversion layerassembly T1 or composed of a second photoelectric conversion layerassembly T2, wherein the absorbing coefficient of the firstphotoelectric conversion layer assembly T1 of ultraviolet light is muchlarger than in other light wave bands (as wave band X1 shown in the leftof FIG. 11), and the absorbing efficiency of the second photoelectricconversion layer assembly T2 of infrared light is much larger than inother light wave bands (as wave band X2 shown in the right of FIG. 11).Thus, at least parts or the whole visible spectrum can penetrate thephotoelectric conversion device 200, which is composed by at least oneof the first photoelectric conversion layer assembly T1 and the secondphotoelectric conversion layer assembly T2. That is, the photoelectricconversion device 200 does not absorb or absorbs less the visible lightwhich wave band is between the wave band X1 and wave band X2.

The photoelectric conversion device of the present invention may furtherinclude a compensation unit or an auxiliary unit, such as a colorfilter, an organic light-emitting diode, a backlight, a colored glass, aliquid crystal cell (LC Cell), a Gamma Curve, or the like, to correctthe chromatic polarization by the chromatic polarization of pixels withdifferent colors. Liquid crystal cell (LC Cell) or liquid crystalgray-scale gamma curve can be corrected by pixels driving voltages ofdifferent RGB, CMY, or RGBW colors, or by different color light, therebycorrecting color chromatic polarization. This way, the chromaticpolarization or the chromatic aberration generated when light passesthrough photoelectric conversion devices can be corrected.

The photoelectric conversion device of the present invention may be usedin various devices. The photoelectric conversion device of the presentinvention may be applied on a base. The base may be a glass, aprotective layer, a touch sensor, a display, a source, or the like. Adevice can be formed by combining the photoelectric conversion deviceand the base, wherein the device enables at least parts of the visiblespectrum to penetrate and converse optical energy into electricalenergy. Besides, due to a photoelectric conversion layer transparent toparts of the visible spectrum being used in the present invention,photoelectric conversion layer components of the prior art are notneeded in the present invention. Therefore, a transparent photoelectricconversion device having a transparent photoelectric conversion layercan be manufactured in the present invention. More specifically, thedevice may include a base and at least a photoelectric conversiondevice, wherein the base has at least a base-transparent substrate usedto attach the photoelectric conversion device; and the photoelectricconversion device can therefore be disposed on the base-transparentsubstrate directly.

Four devices using the photoelectric conversion device of the presentinvention are presented in the following. However, the photoelectricconversion device of the present invention is not restricted to be usedin these four devices.

FIG. 4 schematically depicts a cross-sectional view of a deviceutilizing a photoelectric conversion device according to one embodimentof the present invention. A device 300 includes a base 310 and aphotoelectric conversion device 320 located thereon. The base 310 may bea glass, a protective layer, or a modeling layer. For example, the glassmay be a transparent window used in a construction, a car windshield, acar window, or the like. The protective layer may be a transparent caseon a screen of a mobile phone, a display, or the like, but it is notlimited thereto. Thus, the base 310 can be a base-transparent substrateitself used to attach the photoelectric conversion device 320. In otherwords, the photoelectric conversion device 320 and the base 310 canshare one substrate. So, the first electrode 322 is disposed on the base310 directly, and the photoelectric conversion layer 324 and the secondelectrode 326 are disposed sequentially on the first electrode 322. Themethod of forming the photoelectric conversion device 300 may be: asubstrate or a wafer (not shown) is provided, and the photoelectricconversion device 320 is formed on the substrate or the wafer. Due tothe substrate or the wafer being non-transparent, a stripping process isperformed to strip the photoelectric conversion device 320, and then thephotoelectric conversion device 320 is fitted on the base 310, whichmeans that the manufacturing of the device 310 is finished. In anotherembodiment, the photoelectric conversion device 320 may further includea transparent substrate (not shown) having the first electrode 324, thephotoelectric conversion layer 324 and the second electrode 326sequentially formed thereon and the transparent substrate (not shown)directly combining with the base-transparent substrate of the base 310.That is, the base 310 and the photoelectric conversion device 320 do notshare one substrate and can also form a structure similar to the device310.

In one case, the device 300 may include a charge storage device 330 usedto store the electrical energy generated by the photoelectric conversiondevice 320. In another case, the device 300 may include a power switch340 and a battery 350. As the remaining electrical energy amount of thebattery is less than a predetermined value, the electrical energy of thecharge storage device is delivered through switching. Furthermore, thedevice 300 may include a charge control circuit 360. As the remainingelectrical energy amount of the battery is less than a predeterminedvalue, it will be charged.

FIG. 5 schematically depicts a cross-sectional view of a deviceutilizing a photoelectric conversion device according to one embodimentof the present invention. As shown in FIG. 5, the photoelectricconversion device 420 of the present invention may be used with a touchsensor 410 to form a device 400. The touch sensor 410 may include abase-transparent substrate 412 and a touch sensing unit 414. Thephotoelectric conversion device 420 may include a first electrode 422, aphotoelectric conversion layer 424 and a second electrode 426. In thisembodiment, the photoelectric conversion device 420 is disposed directlyon the base-transparent substrate 412, and therefore shares onesubstrate with the touch sensing unit 414, so that the first electrode422 contacts the base-transparent substrate 412 directly. In anotherembodiment, the photoelectric conversion device 420 may further includea transparent substrate (not shown), and the transparent substrate canfit, overlap, mount or be side by side with the base-transparentsubstrate 412. Therefore, the device 400 is formed, which can absorboptical energy and transform it into electrical energy, and hastransparency properties as well.

FIG. 6 schematically depicts a cross-sectional view of a deviceutilizing a photoelectric conversion device according to one embodimentof the present invention. As shown in FIG. 6, the photoelectricconversion device 520 of the present invention is used in a display 510,so that a device 500 is formed. The photoelectric conversion device 520includes a first electrode 522, a photoelectric conversion layer 524 anda second electrode 526 sequentially formed on the display 510. Thedisplay 510 may be a whole wave band display, a partial wave banddisplay, a monochrome display, a reflective display, a half penetratingand half reflective display, a thin-film transistor-liquid crystaldisplay (TFT-LCD), an active matrix organic light-emitting diode(AMOLED), an electroluminescent (EL) display, an electrophoretic ink(E-Ink) display, an electrode wetting display, a carbon nano tube (CNT)display, a micro electro mechanical systems (MEMS) display, a lightinterference display, a plasma display panel (PDP) display, aconventional cathode ray tube (CRT) display, or the like. The displaymay further include a source, which may be a monochromatic light, awhite light with a plurality of spectral peaks, a white lightlight-emitting diode, a red, blue and green light-emitting diode, awhole wave band spectrum white light, an organic light-emitting diode, atiming controlled colored light source, or an electroluminescent whitelight. The photoelectric conversion device 520 may also be used withother components, for example, sources such as a backlight, a monochromesource, a white source, a RGB source, a colored light source withseparated timing, or a device such as a traffic sign, a banner, areflection component, a banner with patterns or words. Applications ofthese sources or devices are similar to this embodiment, so as not to bedescribed again. The photoelectric conversion device 520 may be locatedat the front of, above of or inside the glass, the protective layer, themodeling layer, the touch sensor, the display, the source, the trafficsign, the banner, the reflection component or the device having patternsor words. In this embodiment, the photoelectric conversion device 520and the display 510 share one substrate. In another embodiment, thephotoelectric conversion device 520 and the display 510 may not sharethe same substrate, and the forming methods are the same as aforesaidembodiment, so they will not be described again.

FIG. 7 schematically depicts a layout diagram of the device of FIG. 6.The display 510 may at least include a first substrate 512 and a secondsubstrate 514, and the photoelectric conversion device 520 may bedisposed on both sides of the first substrate 512 and the secondsubstrate 514. More specifically, one photoelectric conversion device520 may be disposed on one side of the first substrate 512 or the secondsubstrate 514. Or, a plurality of photoelectric conversion devices 520may be disposed respectively on both sides of the first substrate 512and the second substrate 514 to improve the photoelectric conversionefficiency. Furthermore, the display 510 may further include othercomponents such as a common electrode, an array electrode, a colorfilter, or the like, and the photoelectric conversion device 520 may beselectively disposed on these components.

Furthermore, FIG. 8 schematically depicts a top view of the device ofFIG. 6, wherein the display 510 may be divided into a display area A anda periphery area B. Due to visible light needed to penetrate the displayarea A, the photoelectric conversion device 520 is preferred to bedisposed only in the display area A, while conventional non-transparentphotoelectric conversion devices may be used in the periphery area B.The selection of the photoelectric conversion devices depends uponpractical needs.

FIG. 12 schematically depicts a cross-sectional view of a light-emittingdiode device applying the device of FIG. 6, wherein the light-emittingdiode device 800 may be an active matrix organic light-emitting diode,an organic light-emitting diode, a macromolecule light-emitting diode,or the like. The light-emitting diode device 800 may include a firstsubstrate 810, a light-emitting unit 820, a package unit 830 and asecond substrate 840. The first substrate 810 may be regarded as a basesubstrate and the second substrate 840 may be regarded as a protectivesubstrate or the second substrate. The light-emitting unit 820 isdisposed on the first substrate 810. The package unit 830 is disposedbetween the first substrate 810 and the second substrate 840, so thatthe package unit 830, the first substrate 810 and the second substrate840 constitute a close light-emitting diode device 800. Thephotoelectric conversion device 850 of the present invention may bedisposed on the external side of the second substrate 840, the innerside of the second substrate 840, one side of the light-emitting unit820, or the inner, the external side of the first substrate 810.

In a preferred embodiment, the photoelectric conversion device 850 isdisposed on the external side of the second substrate 840 or theexternal side of the first substrate 810, which may depend uponpositions of the top illuminating type or bottom illuminating typeactive matrix organic light-emitting diode (AMOLED). Therefore, theshading of the photoelectric conversion device 850 by other componentsof the light-emitting diode device 800, that decreases the absorbingefficiency, can be avoided.

FIG. 13 schematically depicts a cross-sectional view of a liquid crystaldisplay device comprising the device of FIG. 6. The liquid crystaldisplay device may be a thin-film transistors-liquid crystal display ofcrystalline silicon or low temperature poly-silicon (LTPS). The liquidcrystal display device may include a backlight 910, a first polarizer920, a first substrate 930, a color filter 940, a second substrate 950,a second polarizer 960, a liquid crystal layer 970 and an electrode 980including a pixel electrode 982 and a corresponding common electrode984. The backlight 910 and the first polarizer 920 are disposed on theexternal side of the first substrate 930, and the first polarizer 920 isdisposed between the backlight 910 and the first substrate 930. Thepixel electrode 982 is disposed on the inner side of the first substrate930. The color filter 940 and the second polarizer 960 are respectivelydisposed on the inner side and the external side of the second substrate950. The common electrode 984 is disposed on the inner side of the colorfilter 940. The liquid crystal layer 970 is disposed between the pixelelectrode 982 and the common electrode 984. The photoelectric conversiondevice 990 of the present invention may be disposed on/between eachlayer. For example, the photoelectric conversion device 990 may bedisposed between the first polarizer 920 and the first substrate 930,between the color filter 940 and the common electrode 984, between thecolor filter 940 and the second substrate 950, between the secondsubstrate 950 and the second polarizer 960, or on the external side ofthe second polarizer 960. In a preferred embodiment, the photoelectricconversion device 990 of the present invention is disposed on theexternal side of the second polarizer 960, so that the shading of thephotoelectric conversion device 990 by other components, which decreasesthe absorbing efficiency of the photoelectric conversion device 990, canbe avoided.

FIG. 9 schematically depicts a cross-sectional view of a devicecomprising a photoelectric conversion device according to one embodimentof the present invention. The photoelectric conversion device 620 may bepaired with at least an auxiliary component 610, and the photoelectricconversion device 620 and the auxiliary component 610 thereforeconstitute a device 600. The transparent substrate may be an auxiliarycomponent 610. There are light reflecting structures in at least someareas of the transparent substrate, so that light can be reflected backby the transparent substrate. Furthermore, the auxiliary component 610may be a cavity component, a light interference component, a lightreflecting component, or the like, which is disposed on the light pathof the photoelectric conversion device 620, and can increase the lightabsorbing efficiency of the photoelectric conversion device 620.

The photoelectric conversion device of the present invention may be usedin an array device. FIG. 10 schematically depicts a cross-sectional viewof an array device comprising a photoelectric conversion deviceaccording to one embodiment of the present invention. The array device700 may include a base substrate 710, a plurality of bases 720 and aplurality of photoelectric conversion devices 730, wherein the bases 720and the photoelectric conversion device 730 are located on the basesubstrate 710. In this embodiment, each photoelectric conversion device730 is disposed on each corresponding base 720, so that the array layoutdepends upon the locations of the bases 720. In another embodiment, eachphotoelectric conversion device 730 may be disposed staggeredly with thebases 720, or each photoelectric conversion device 730 may bedistributed in the bases 720, to form an array device 700.

In the present invention, at least parts of the visible spectrum canpass though the photoelectric conversion device 320/420/520/620/730.More specifically, the photoelectric conversion layer 324/424/524 of thephotoelectric conversion device 320/420/520/620/730 enables the opticallight transmittance of at least a wave band of the visible spectrum tobe larger than 20%. The photoelectric conversion layer 324/424/524 maybe composed of photoelectric conversion materials such as apolycrystalline layer, a single crystal layer, a nano and organic layer,a silicon layer, a multi-compounds layer, or the like, that enables atleast parts of the visible spectrum to pass through. The photoelectricconversion layer 324/424/524 may be a structure composed of said singlelayer or said multilayers, selected and paired upon needs (as shown inFIG. 11). In another way, at least a part of the transparent substrate(not shown) of the present invention are transparent, which may be aglass substrate, a plastic substrate, a flexible substrate, or the like,wherein the transparent substrate (not shown) may have a planar shape ora curved shape. The material of the transparent substrate (not shown)may be composed of soda-lime glass, or at least a part of thetransparent substrate area have a light reflective structure, enablinglight to be reflected, but it is not limited thereto. The firstelectrode 322/422/522 or the second electrode 326/426/526 may be atransparent electrode, wherein the material of the transparent electrodemay be composed of transparent conductive oxide (TCO) such as aluminumzinc (AZO), grapheme, indium tin oxide (ITO), indium zinc oxide (IZO),or metal alloy such as aluminum (Al), copper (Cu), gold (Au), or thelike. Layouts of these components are similar to aforesaid embodiment,and won't be described here again.

Above all, the present invention provides a photoelectric conversiondevice, device and array device comprising the photoelectric conversiondevice, wherein the photoelectric conversion device enables at leastparts of the visible spectrum to pass through. More specifically, thephotoelectric conversion device has at least a photoelectric conversionlayer, which may be a single photoelectric conversion layer or aplurality of photoelectric conversion layers. The optical lighttransmittance of at least a wave band of visible spectrum of thephotoelectric conversion layer is larger than 20%. So, the photoelectricconversion device formed by the photoelectric conversion layer of thepresent invention has higher photoelectric conversion efficiency thanthe photoelectric conversion device of the prior art formed by anon-transparent photoelectric conversion layer. The processing cost ofpatterning the non-transparent photoelectric conversion layer can beeliminated. The application art and application scope can be widened.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A device with a photoelectric conversion device,wherein said photoelectric conversion device comprises: a transparentsubstrate; a first electrode disposed on said transparent substrate; aphotoelectric conversion layer located on and indirect contact with saidfirst electrode, wherein an optical light transmittance of saidphotoelectric conversion layer in at least a portion of visible spectrumis higher than 20%; a second electrode on and indirect contact with saidphotoelectric conversion layer; and a compensation unit for correctingcolor chromatic polarization.
 2. The device according to claim 1,wherein said at least a photoelectric conversion layer comprises aplurality of stacked photoelectric conversion material layers.
 3. Thedevice according to claim 1, wherein said at least a photoelectricconversion layer comprises a P-N junction layer, an electron-holejunction layer, a silicon layer, a multi-compounds layer, or a nano andorganic layer.
 4. The device according to claim 1, wherein said firstelectrode and said second electrode respectively comprise a transparentelectrode, a comb-shaped conductive electrode or a reflector electrode.5. The device according to claim 1, wherein said first electrode andsaid second electrode comprise conductive materials being transparent tovisible light, UV light, or infrared light.
 6. The device according toclaim 1, wherein said compensation unit comprises an organiclight-emitting diode, a backlight, a colored glass, or a liquid crystalcell.
 7. The device according to claim 1, wherein said at least aphotoelectric conversion layer absorbs at least a part of wave band ofUV light or a part of wave band of infrared light.
 8. The deviceaccording to claim 1, wherein said at least a photoelectric conversionlayer absorbs at least a part of wave band of red light, a part of waveband of green light, a part of wave band of blue light, a part of waveband of yellow light, a part of wave band of green light, or a part ofwave band of purplish red light.
 9. A device, comprising: aphotoelectric conversion device comprising: a transparent substrate; afirst electrode disposed on said transparent substrate; a photoelectricconversion layer located on and in direct contact with said firstelectrode, wherein an optical light transmittance of said photoelectricconversion layer in at least a portion of visible spectrum is higherthan 20%; a second electrode on and in direct contact with saidphotoelectric conversion layer; and a charge storage device for storingelectrical energy generated by said photoelectric conversion device. 10.The device according to claim 9, wherein said device further comprises aswitch, and said switch is switched to use said electrical energy ofsaid charge storage device when remaining electrical energy of saidelectrical energy storage device is lower than a predetermined value.11. A device, comprising: a photoelectric conversion device comprising:a first electrode; a photoelectric conversion layer located on and indirect contact with said first electrode, wherein an optical lighttransmittance of said photoelectric conversion layer in at least aportion of visible spectrum is higher than 20%; a second electrode onand in direct contact with said photoelectric conversion layer; and anauxiliary component paired with said photoelectric conversion device,being disposed on a light path of said photoelectric conversion deviceto increase light absorbing efficiency of said photoelectric conversiondevice.
 12. The device according to claim 11, wherein said auxiliarycomponent comprises a cavity component, a light interference component,or a light reflecting component.
 13. An array device, comprising: a basesubstrate; an array of bases located on a major surface of said basesubstrate; and a plurality of photoelectric conversion devices, whereineach of the plurality of photoelectric conversion devices is located oneach of the array of bases.
 14. The array device according to claim 13,wherein said photoelectric conversion device comprises: a firstelectrode; a photoelectric conversion layer located on and in directcontact with said first electrode, wherein an optical lighttransmittance of said photoelectric conversion layer in at least aportion of visible spectrum is higher than 20%; and a second electrodeon and in direct contact with said photoelectric conversion layer.